| PART |
Description |
Maker |
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND02GW4B2DN6E NAND02GW4B2DN6F NAND02G-B2D NAND02 |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| NAND08GW3C4AZL1E NAND08GW3C2AZL1E |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V
http://
|
| MB84VP23481FK-70 MB84VP23481FK-70PBS |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
Spansion Inc.
|
| MB84VP23481FK-70PBS MB84VP23481FK-70 |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
SPANSION[SPANSION]
|
| HYE18M1G16 HYE18M1G160BF-6 HYE18M1G160BF-7.5 HYE18 |
1-Gbit x16 DDR Mobile-RAM
|
Qimonda AG
|
| GM71C4263DLJ-80 GM71C4263DT-70 GM71C4263DLT-70 GM7 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG, Corp.
|
| AT25F1024A AT25F1024AN-10SU-2.7 AT25F1024AY4-10YU- |
Byte Mode and 256-byte Page Mode for Program Operations
1Mbit High Speed SPI Serial Flash Memory 1M (131,072 x 8)
|
ATMEL Corporation
|
| AT25F2048-14 |
Byte Mode and 256-byte Page Mode for Program Operations
|
ATMEL Corporation
|
| TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
